Справочник IGBT. OST80N65HSMF

 

OST80N65HSMF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST80N65HSMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 395 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 114 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.35 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.2 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 120 nS
   Coesⓘ - Выходная емкость, типовая: 234 pF
   Qgⓘ - Общий заряд затвора, typ: 224 nC
   Тип корпуса: TO247

 Аналог (замена) для OST80N65HSMF

 

 

OST80N65HSMF Datasheet (PDF)

 ..1. Size:803K  oriental semi
 ost80n65hsmf.pdf

OST80N65HSMF OST80N65HSMF

OST80N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:804K  oriental semi
 ost80n65h4emf.pdf

OST80N65HSMF OST80N65HSMF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 5.2. Size:831K  oriental semi
 ost80n65hevf.pdf

OST80N65HSMF OST80N65HSMF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.3. Size:884K  oriental semi
 ost80n65h4ewf.pdf

OST80N65HSMF OST80N65HSMF

 5.4. Size:767K  oriental semi
 ost80n65hemf.pdf

OST80N65HSMF OST80N65HSMF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.5. Size:900K  oriental semi
 ost80n65hewf.pdf

OST80N65HSMF OST80N65HSMF

 5.6. Size:719K  oriental semi
 ost80n65hmf.pdf

OST80N65HSMF OST80N65HSMF

OST80N65HMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

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