OST50N65HEWF - аналоги, основные параметры, даташиты
Наименование: OST50N65HEWF
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 375 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
tr ⓘ - Время нарастания типовое: 80 nS
Coesⓘ - Выходная емкость,
типовая: 273 pF
Тип корпуса: TO247
Аналог (замена) для OST50N65HEWF
- подбор ⓘ IGBT транзистора по параметрам
OST50N65HEWF даташит
5.1. Size:732K oriental semi
ost50n65hmf.pdf 
OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.2. Size:535K oriental semi
ost50n65hf-d.pdf 
OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.4. Size:747K oriental semi
ost50n65hszf.pdf 
OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.5. Size:765K oriental semi
ost50n65hm2f.pdf 
OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.6. Size:752K oriental semi
ost50n65hsnf.pdf 
OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.7. Size:617K oriental semi
ost50n65hzf.pdf 
OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.8. Size:698K oriental semi
ost50n65hf.pdf 
OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology
5.9. Size:745K oriental semi
ost50n65hxf.pdf 
OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Другие IGBT... OST80N65HSMF
, OST90N60HCZF
, OST90N65HM2F
, OSC80N65HF
, OSC90N65HF
, RJH3047
, GT30F123
, GT30J127
, CRG60T60AN3H
, OST50N65KEW2F
, OST60N65H4EMF
, OST60N65H4EWF
, OST75N65HSWF
, OST80N65H4EWF
, OST80N65HEWF
, SGT10T60SD1S
, SGT10T60SD1F
.
