NCE15TD120LT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE15TD120LT
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 35 pF
Qg ⓘ - Общий заряд затвора, typ: 90 nC
Тип корпуса: TO-247
Аналог (замена) для NCE15TD120LT
NCE15TD120LT Datasheet (PDF)
nce15td120lt.pdf

PbFreeProduct NCE15TD120LT 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15td120lp.pdf

PbFreeProduct NCE15TD120LP 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15td120bd.pdf

Pb Free ProductNCE15TD120BD1200V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce15td120bt.pdf

PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
Другие IGBT... NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP , NCE120ED120VTP4 , NCE15T60BD , NCE15TD120BD , NCE15TD120LP , FGH60N60SMD , NCE15TD135LP , NCE15TD135LT , NCE15TD60BP , NCE15TD60BT , NCE15TD65BF , NCE15TD65BP , NCE15TD65BT , NCE160ED120VTP .
History: IXBH6N170 | MWI15-12A6K | SGT75T65SDM1P7
History: IXBH6N170 | MWI15-12A6K | SGT75T65SDM1P7



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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