NCE15TD65BF Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE15TD65BF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 50 pF
Qg ⓘ - Общий заряд затвора, typ: 63 nC
Тип корпуса: TO-220F
Аналог (замена) для NCE15TD65BF
NCE15TD65BF Datasheet (PDF)
nce15td65bf.pdf

Pb Free ProductNCE15TD65BF650V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce15td65bt.pdf

Pb Free ProductNCE15TD65BT650V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce15td65bp.pdf

Pb Free ProductNCE15TD65BP650V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce15td60bd nce15td60b nce15td60bf.pdf

PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
Другие IGBT... NCE15T60BD , NCE15TD120BD , NCE15TD120LP , NCE15TD120LT , NCE15TD135LP , NCE15TD135LT , NCE15TD60BP , NCE15TD60BT , FGA25N120ANTD , NCE15TD65BP , NCE15TD65BT , NCE160ED120VTP , NCE160ED120VTP4 , NCE160ED65VTP , NCE160ED65VTP4 , NCE20TD60BP , NCE20TD60BT .
History: IXGT15N120B2D1
History: IXGT15N120B2D1



Список транзисторов
Обновления
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