NCE20TH60BF Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE20TH60BF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 34.5 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 16 nS
Coesⓘ - Выходная емкость, типовая: 48 pF
Qgⓘ - Общий заряд затвора, typ: 97 nC
Тип корпуса: TO-220F
- подбор IGBT транзистора по параметрам
NCE20TH60BF Datasheet (PDF)
nce20th60bf.pdf

PbFreeProduct NCE20TH60BF 600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s
nce20th60bp.pdf

PbFreeProduct NCE20TH60BP 600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s
nce20td65bd.pdf

Pb Free ProductNCE20TD65B650V, 20A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce20td60bp.pdf

PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
Другие IGBT... NCE15TD65BT , NCE160ED120VTP , NCE160ED120VTP4 , NCE160ED65VTP , NCE160ED65VTP4 , NCE20TD60BP , NCE20TD60BT , NCE20TD65BD , FGA60N65SMD , NCE25TC120HD , NCE25TD120BD , NCE25TD120LP , NCE25TD120VD , NCE25TD120VT , NCE25TD120VTP , NCE25TD120W , NCE25TD120WT .



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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