Справочник IGBT. NCE30TD65BP

 

NCE30TD65BP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE30TD65BP
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 17 nS
   Coesⓘ - Выходная емкость, типовая: 106 pF
   Qgⓘ - Общий заряд затвора, typ: 132 nC
   Тип корпуса: TO-3P

 Аналог (замена) для NCE30TD65BP

 

 

NCE30TD65BP Datasheet (PDF)

 ..1. Size:1031K  ncepower
nce30td65bp.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD65BP650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.1. Size:1163K  ncepower
nce30td65bd.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD65BD650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.2. Size:1030K  ncepower
nce30td65bt.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD65BT650V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 6.1. Size:1027K  ncepower
nce30td60bp.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 6.2. Size:658K  ncepower
nce30td60bd.pdf

NCE30TD65BP
NCE30TD65BP

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed

 6.3. Size:742K  ncepower
nce30td60bp nce30td60bt.pdf

NCE30TD65BP
NCE30TD65BP

PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

 6.4. Size:1232K  ncepower
nce30td60b.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD60B600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 6.5. Size:1027K  ncepower
nce30td60bt.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD60BT600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 6.6. Size:1194K  ncepower
nce30td60bf.pdf

NCE30TD65BP
NCE30TD65BP

Pb Free ProductNCE30TD60BF600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 6.7. Size:701K  ncepower
nce30td60b nce30td60bf.pdf

NCE30TD65BP
NCE30TD65BP

PbFreeProduct NCE30TD60B,NCE30TD60BF 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat Hi

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