Справочник IGBT. NCE50EU65UT

 

NCE50EU65UT Даташит. Аналоги. Параметры и характеристики.


   Наименование: NCE50EU65UT
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 294 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 13 nS
   Coesⓘ - Выходная емкость, типовая: 100 pF
   Тип корпуса: TO247
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NCE50EU65UT Datasheet (PDF)

 ..1. Size:1222K  ncepower
 nce50eu65ut.pdf pdf_icon

NCE50EU65UT

NCE50EU65UT650V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.80V(Typ.) @ IC = 50

 8.1. Size:1161K  ncepower
 nce50ed120vt.pdf pdf_icon

NCE50EU65UT

NCE50ED120VT1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 8.2. Size:1194K  ncepower
 nce50ed65vt.pdf pdf_icon

NCE50EU65UT

NCE50ED65VT650V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 50

 8.3. Size:1175K  ncepower
 nce50ed120vtp.pdf pdf_icon

NCE50EU65UT

NCE50ED120VTP1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE40TD60BPF , NCE40TD65B , NCE40TD65BP , NCE40TH60BPF , NCE40TH60BT , NCE50ED120VT , NCE50ED120VTP , NCE50ED65VT , IRG4PC50U , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT , NCE60TD65BP .

History: NGTB30N120FL2 | IRG4BC10SD-L | BLG40T65FUK-F | GT30J311 | STGP30M65DF2 | BLG60T65FDK-K | IRGS4640D

 

 
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