Справочник IGBT. NCE50TD120BP

 

NCE50TD120BP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE50TD120BP
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 535
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 100
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.55
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 17
   Емкость коллектора типовая (Cc), pf: 218
   Общий заряд затвора (Qg), typ, nC: 381
   Тип корпуса: TO-3P

 Аналог (замена) для NCE50TD120BP

 

 

NCE50TD120BP Datasheet (PDF)

 ..1. Size:1416K  ncepower
nce50td120bp.pdf

NCE50TD120BP
NCE50TD120BP

Pb Free ProductNCE50TD120BP1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 3.1. Size:1491K  ncepower
nce50td120bt.pdf

NCE50TD120BP
NCE50TD120BP

Pb Free ProductNCE50TD120BT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.1. Size:1676K  ncepower
nce50td120vt.pdf

NCE50TD120BP
NCE50TD120BP

Pb Free ProductNCE50TD120VT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.2. Size:1564K  ncepower
nce50td120vtp.pdf

NCE50TD120BP
NCE50TD120BP

Pb Free ProductNCE50TD120VTP1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.3. Size:1468K  ncepower
nce50td120ww.pdf

NCE50TD120BP
NCE50TD120BP

Pb Free ProductNCE50TD120WW1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.4. Size:1473K  ncepower
nce50td120wt.pdf

NCE50TD120BP
NCE50TD120BP

Pb Free ProductNCE50TD120WT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

Другие IGBT... NCE40TD65B , NCE40TD65BP , NCE40TH60BPF , NCE40TH60BT , NCE50ED120VT , NCE50ED120VTP , NCE50ED65VT , NCE50EU65UT , IRG4PF50W , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT , NCE60TD65BP , NCE60TD65BT4 .

 

 
Back to Top