Аналоги NCE50TD120VT. Основные параметры
Наименование: NCE50TD120VT
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 535 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 220 pF
Тип корпуса: TO-247
Аналог (замена) для NCE50TD120VT
NCE50TD120VT даташит
nce50td120vt.pdf
Pb Free Product NCE50TD120VT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50td120vtp.pdf
Pb Free Product NCE50TD120VTP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50td120bt.pdf
Pb Free Product NCE50TD120BT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50td120bp.pdf
Pb Free Product NCE50TD120BP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
Другие IGBT... NCE40TH60BPF , NCE40TH60BT , NCE50ED120VT , NCE50ED120VTP , NCE50ED65VT , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , AOK40B65H2AL , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 .
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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