NCE50TD120VT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE50TD120VT
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 535 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 220 pF
Тип корпуса: TO-247
- подбор IGBT транзистора по параметрам
NCE50TD120VT Datasheet (PDF)
nce50td120vt.pdf

Pb Free ProductNCE50TD120VT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce50td120vtp.pdf

Pb Free ProductNCE50TD120VTP1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce50td120bt.pdf

Pb Free ProductNCE50TD120BT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce50td120bp.pdf

Pb Free ProductNCE50TD120BP1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
Другие IGBT... NCE40TH60BPF , NCE40TH60BT , NCE50ED120VT , NCE50ED120VTP , NCE50ED65VT , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , FGL60N100BNTD , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 .
History: 2MBI200TA-060 | IXGT10N170 | BSM100GB60DLC | STGE50NC60WD
History: 2MBI200TA-060 | IXGT10N170 | BSM100GB60DLC | STGE50NC60WD



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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