Справочник IGBT. NCE50TD120WW

 

NCE50TD120WW - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE50TD120WW
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 535 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 17 nS
   Coesⓘ - Выходная емкость, типовая: 214 pF
   Qgⓘ - Общий заряд затвора, typ: 294 nC
   Тип корпуса: TO-264

 Аналог (замена) для NCE50TD120WW

 

 

NCE50TD120WW Datasheet (PDF)

 ..1. Size:1468K  ncepower
 nce50td120ww.pdf

NCE50TD120WW NCE50TD120WW

Pb Free ProductNCE50TD120WW1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 3.1. Size:1473K  ncepower
 nce50td120wt.pdf

NCE50TD120WW NCE50TD120WW

Pb Free ProductNCE50TD120WT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.1. Size:1491K  ncepower
 nce50td120bt.pdf

NCE50TD120WW NCE50TD120WW

Pb Free ProductNCE50TD120BT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.2. Size:1676K  ncepower
 nce50td120vt.pdf

NCE50TD120WW NCE50TD120WW

Pb Free ProductNCE50TD120VT1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.3. Size:1564K  ncepower
 nce50td120vtp.pdf

NCE50TD120WW NCE50TD120WW

Pb Free ProductNCE50TD120VTP1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.4. Size:1416K  ncepower
 nce50td120bp.pdf

NCE50TD120WW NCE50TD120WW

Pb Free ProductNCE50TD120BP1200V, 50A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

Другие IGBT... NCE50ED120VTP , NCE50ED65VT , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , STGW60V60DF , NCE60TD120UT , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT .

 

 
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