BLG40T120FUK-F datasheet, аналоги, основные параметры
Наименование: BLG40T120FUK-F 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 367 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.35 V @25℃
tr ⓘ - Время нарастания типовое: 96 nS
Coesⓘ - Выходная емкость, типовая: 152 pF
Тип корпуса: TO-247
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Аналог (замена) для BLG40T120FUK-F
- подбор ⓘ IGBT транзистора по параметрам
BLG40T120FUK-F даташит
blg40t120fuk-f.pdf
BLG40T120FUK IGBT 1 Description Step-Down Converter BLG40T120FUK is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A C
blg40t120fuh-f.pdf
BLG40T120FUH IGBT 1 Description Step-Down Converter BLG40T120FUH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A
blg40t120fdh-f.pdf
BLG40T120FDH IGBT 1 Description Step-Down Converter BLG40T120FDH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A
blg40t65fdk-w blg40t65fdk-f.pdf
BLG40T65FDK IGBT 1 Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
Другие IGBT... BLG20T65FULA-P, BLG20T65FULA-A, BLG3040-D, BLG3040-B, BLG3040-P, BLG3040-I, BLG40T120FDH-F, BLG40T120FUH-F, CRG60T60AN3H, BLG40T65FDK-W, BLG40T65FDK-F, BLG40T65FDL-F, BLG40T65FDL-K, BLG40T65FDL-W, BLG40T65FUK-W, BLG40T65FUK-F, BLG40T65FUL-F
History: APTGS50X170E3 | APTGS50X170TE3 | APT44GA60SD30C
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Список транзисторов
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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