BLG40T120FUK-F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: BLG40T120FUK-F
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 367 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.35 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 96 nS
Coesⓘ - Выходная емкость, типовая: 152 pF
Тип корпуса: TO-247
Аналог (замена) для BLG40T120FUK-F
BLG40T120FUK-F Datasheet (PDF)
blg40t120fuk-f.pdf
BLG40T120FUK IGBT 1Description Step-Down Converter BLG40T120FUK is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CESI 40 A C
blg40t120fuh-f.pdf
BLG40T120FUH IGBT 1Description Step-Down Converter BLG40T120FUH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CESI 40 A
blg40t120fdh-f.pdf
BLG40T120FDH IGBT 1Description Step-Down Converter BLG40T120FDH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CESI 40 A
blg40t65fdk-w blg40t65fdk-f.pdf
BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf
BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fuk-w blg40t65fuk-f.pdf
BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf
BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2