BLG40T65FUK-F Даташит. Аналоги. Параметры и характеристики.
Наименование: BLG40T65FUK-F
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 298 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 35 nS
Coesⓘ - Выходная емкость, типовая: 90 pF
Тип корпуса: TO-247
- подбор IGBT транзистора по параметрам
BLG40T65FUK-F Datasheet (PDF)
blg40t65fuk-w blg40t65fuk-f.pdf

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fdk-w blg40t65fdk-f.pdf

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
Другие IGBT... BLG40T120FUH-F , BLG40T120FUK-F , BLG40T65FDK-W , BLG40T65FDK-F , BLG40T65FDL-F , BLG40T65FDL-K , BLG40T65FDL-W , BLG40T65FUK-W , FGPF4633 , BLG40T65FUL-F , BLG40T65FUL-K , BLG40T65FUL-W , BLG50T65FDKA-F , BLG50T65FDLA-F , BLG50T65FDLA-K , BLG50T65FDLA-W , BLG50T65FKA-F .
History: SGTP75V65FDB1P4B | GT80J101 | BLG40T120FUH-F | APTLGF210U120T | MMG150S120B6TN | SGT20T60SD1T | APTGF25X120E2
History: SGTP75V65FDB1P4B | GT80J101 | BLG40T120FUH-F | APTLGF210U120T | MMG150S120B6TN | SGT20T60SD1T | APTGF25X120E2



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940 | 2sc627 | 2sc680