BLG40T65FUL-F datasheet, аналоги, основные параметры

Наименование: BLG40T65FUL-F  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃

tr ⓘ - Время нарастания типовое: 33 nS

Coesⓘ - Выходная емкость, типовая: 124 pF

Тип корпуса: TO-247

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 Аналог (замена) для BLG40T65FUL-F

- подбор ⓘ IGBT транзистора по параметрам

 

BLG40T65FUL-F даташит

 ..1. Size:1083K  belling
 blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf pdf_icon

BLG40T65FUL-F

BLG40T65FUL IGBT 1 Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

 4.1. Size:954K  belling
 blg40t65fuk-w blg40t65fuk-f.pdf pdf_icon

BLG40T65FUL-F

BLG40T65FUK IGBT 1 Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 5.1. Size:988K  belling
 blg40t65fdk-w blg40t65fdk-f.pdf pdf_icon

BLG40T65FUL-F

BLG40T65FDK IGBT 1 Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 5.2. Size:1127K  belling
 blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf pdf_icon

BLG40T65FUL-F

BLG40T65FDL IGBT 1 Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

ПОКАЗАТЬ ЕЩЁ

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