Справочник IGBT. BLG50T65FDKA-F

 

BLG50T65FDKA-F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BLG50T65FDKA-F
   Тип транзистора: IGBT + Diode
   Маркировка: 50T65FDKA
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.2 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 50 nS
   Coesⓘ - Выходная емкость, типовая: 60 pF
   Qgⓘ - Общий заряд затвора, typ: 110 nC
   Тип корпуса: TO-247

 Аналог (замена) для BLG50T65FDKA-F

 

 

BLG50T65FDKA-F Datasheet (PDF)

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 blg50t65fdka-f.pdf

BLG50T65FDKA-F BLG50T65FDKA-F

BLG50T65FDKA IGBT 1Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

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 blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf

BLG50T65FDKA-F BLG50T65FDKA-F

BLG50T65FDLA IGBT 1Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.1. Size:786K  belling
 blg50t65fla-f.pdf

BLG50T65FDKA-F BLG50T65FDKA-F

BLG50T65FLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.2. Size:833K  belling
 blg50t65fka-f.pdf

BLG50T65FDKA-F BLG50T65FDKA-F

BLG50T65FKA IGBT 1Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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