BLG50T65FLA-F datasheet, аналоги, основные параметры

Наименование: BLG50T65FLA-F  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 44 nS

Coesⓘ - Выходная емкость, типовая: 158 pF

Тип корпуса: TO-247

  📄📄 Копировать 

 Аналог (замена) для BLG50T65FLA-F

- подбор ⓘ IGBT транзистора по параметрам

 

BLG50T65FLA-F даташит

 ..1. Size:786K  belling
 blg50t65fla-f.pdf pdf_icon

BLG50T65FLA-F

BLG50T65FLA IGBT 1 Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.1. Size:1095K  belling
 blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf pdf_icon

BLG50T65FLA-F

BLG50T65FDLA IGBT 1 Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.2. Size:889K  belling
 blg50t65fdka-f.pdf pdf_icon

BLG50T65FLA-F

BLG50T65FDKA IGBT 1 Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.3. Size:833K  belling
 blg50t65fka-f.pdf pdf_icon

BLG50T65FLA-F

BLG50T65FKA IGBT 1 Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BLG40T65FUL-F, BLG40T65FUL-K, BLG40T65FUL-W, BLG50T65FDKA-F, BLG50T65FDLA-F, BLG50T65FDLA-K, BLG50T65FDLA-W, BLG50T65FKA-F, GT30G124, BLG60T65FDK-F, BLG60T65FDK-K, BLG60T65FDK-W, BLG60T65FDL-F, BLG60T65FDL-K, BLG60T65FDL-W, BLG60T65FUL-F, BLG60T65FUL-K