Справочник IGBT. BLG60T65FUL-K

 

BLG60T65FUL-K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BLG60T65FUL-K
   Тип транзистора: IGBT + Diode
   Маркировка: 60T65FUL
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 62.5 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 120
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.6
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.2
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 47
   Емкость коллектора типовая (Cc), pf: 121
   Общий заряд затвора (Qg), typ, nC: 118
   Тип корпуса: TO-3PF

 Аналог (замена) для BLG60T65FUL-K

 

 

BLG60T65FUL-K Datasheet (PDF)

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 blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FUL-K BLG60T65FUL-K

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

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 blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FUL-K BLG60T65FUL-K

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

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 blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FUL-K BLG60T65FUL-K

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

Другие IGBT... BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K , BLG60T65FDK-W , BLG60T65FDL-F , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , FGPF4633 , BLG60T65FUL-W , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B .

 

 
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