BLG75T65FDL-F Даташит. Аналоги. Параметры и характеристики.
Наименование: BLG75T65FDL-F
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 468 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
tr ⓘ - Время нарастания типовое: 74 nS
Coesⓘ - Выходная емкость, типовая: 200 pF
Тип корпуса: TO-247
Аналог (замена) для BLG75T65FDL-F
BLG75T65FDL-F Datasheet (PDF)
blg75t65fdl-f.pdf

BLG75T65FDL IGBT 1Description Step-Down Converter BLG75T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un
blg75t65fdk-f.pdf

BLG75T65FDK IGBT 1Description Step-Down Converter BLG75T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un
blg75t65fuk-f.pdf

BLG75T65FUK IGBT 1Description Step-Down Converter BLG75T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un
Другие IGBT... BLG60T65FDK-W , BLG60T65FDL-F , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , BLG60T65FUL-W , BLG75T65FDK-F , SGH80N60UFD , BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K .
History: RJP4301APP-M0 | AP30G100W | TGAN20N120FD
History: RJP4301APP-M0 | AP30G100W | TGAN20N120FD



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sb1560 | 2n1304 | 2sa979 | 2sc4793 | d965 | mje15031 | irfp150n | mj15025