AOK20B65M1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AOK20B65M1
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 227 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 25 nS
Coesⓘ - Выходная емкость, типовая: 141 pF
Тип корпуса: TO247
Аналог (замена) для AOK20B65M1
AOK20B65M1 Datasheet (PDF)
aok20b65m1.pdf
AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab
aok20b65m2.pdf
AOK20B65M2TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok20b60d1.pdf
AOK20B60D1TM600V, 20A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 20Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok20b135d1.pdf
AOK20B135D1TM 1350V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.57V Better thermal management
aok20b120e1.pdf
AOK20B120E1TMAlpha IGBT with Diode1200V, 20AGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.68V Better thermal management Hi
aok20b120e2.pdf
AOK20B120E2TM1200V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary Latest Alpha IGBT ( IGBT) technology VCE1200V Best in Class VCE(sat) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time VCE(sat) (TC=25C) 1.75V Very smooth turn-off current waveforms reduce EM
aok20b120d1.pdf
AOK20B120D1 TM1200V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.54V Better thermal management
aok20b135e1.pdf
AOK20B135E1TMAlpha IGBT with Diode1350V, 20AGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hig
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2