AOK20B65M2 Даташит. Аналоги. Параметры и характеристики.
Наименование: AOK20B65M2
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 227 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 32 nS
Coesⓘ - Выходная емкость, типовая: 156 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
AOK20B65M2 Datasheet (PDF)
aok20b65m2.pdf

AOK20B65M2TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok20b65m1.pdf

AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab
aok20b60d1.pdf

AOK20B60D1TM600V, 20A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 20Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok20b135d1.pdf

AOK20B135D1TM 1350V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.57V Better thermal management
Другие IGBT... AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 , IRG7R313U , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , AOK30B65M2 , AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 .
History: VS-20MT120UFAPBF | APT20GF120KR | CM200E3U-24F | AFGHL40T65SPD | IXGC16N60C2 | IXYH24N90C3D1 | MM50G3U120BMX
History: VS-20MT120UFAPBF | APT20GF120KR | CM200E3U-24F | AFGHL40T65SPD | IXGC16N60C2 | IXYH24N90C3D1 | MM50G3U120BMX



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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