Справочник IGBT. AOT10B65M1

 

AOT10B65M1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AOT10B65M1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 16 nS
   Coesⓘ - Выходная емкость, типовая: 68 pF
   Qgⓘ - Общий заряд затвора, typ: 24 nC
   Тип корпуса: TO220

 Аналог (замена) для AOT10B65M1

 

 

AOT10B65M1 Datasheet (PDF)

 ..1. Size:1183K  aosemi
 aot10b65m1.pdf

AOT10B65M1 AOT10B65M1

AOT10B65M1/AOB10B65M1TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

 5.1. Size:1525K  aosemi
 aot10b65m2.pdf

AOT10B65M1 AOT10B65M1

AOT10B65M2TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 10A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 5.2. Size:592K  aosemi
 aot10b65mq2.pdf

AOT10B65M1 AOT10B65M1

AOT10B65MQ2TM 650V, 10A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

 7.1. Size:654K  aosemi
 aot10b60d.pdf

AOT10B65M1 AOT10B65M1

AOT10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 7.2. Size:582K  aosemi
 aot10b60m1.pdf

AOT10B65M1 AOT10B65M1

AOT10B60M1TM 600V,10A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 600V 600V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.3VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Другие IGBT... AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , MGD623S , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D , AOT5B65M1 .

 

 
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