AOTF8B65MQ1
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AOTF8B65MQ1
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 30
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 650
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
16
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.8
V @25℃
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 14
nS
Coesⓘ - Выходная емкость, типовая: 45
pF
Тип корпуса:
TO220F
- подбор транзистора по параметрам
AOTF8B65MQ1
Datasheet (PDF)
..1. Size:593K aosemi
aotf8b65mq1.pdf 


AOTF8B65MQ1TM 650V, 8A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 8AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.8VC) Low VCE(sat) and Vf Low turn-off switching loss and softness High effective tu
9.1. Size:159K aosemi
aotf8n50.pdf 


AOT8N50/AOTF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.2. Size:349K aosemi
aotf8n80.pdf 


AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.3. Size:441K aosemi
aotf8n60.pdf 


AOT8N60/AOTF8N60600V,8A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT8N60 & AOTF8N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.4. Size:276K aosemi
aot8n50 aotf8n50.pdf 


AOT8N50/AOTF8N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.5. Size:154K aosemi
aotf8n65.pdf 


AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.6. Size:444K aosemi
aotf8t50p.pdf 


AOTF8T50P500V,8A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 32A Low Ciss and Crss RDS(ON),max
9.7. Size:252K inchange semiconductor
aotf8n50.pdf 


isc N-Channel MOSFET Transistor AOTF8N50FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.8. Size:206K inchange semiconductor
aotf8n80.pdf 


INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF8N80FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
9.9. Size:252K inchange semiconductor
aotf8n60.pdf 


isc N-Channel MOSFET Transistor AOTF8N60FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.10. Size:252K inchange semiconductor
aotf8n65.pdf 


isc N-Channel MOSFET Transistor AOTF8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.11. Size:251K inchange semiconductor
aotf8t50p.pdf 


isc N-Channel MOSFET Transistor AOTF8T50PFEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.81(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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