Справочник IGBT. IXSH40N60

 

IXSH40N60 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXSH40N60
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5(max) V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 170 nS
   Coesⓘ - Выходная емкость, типовая: 350 pF
   Qgⓘ - Общий заряд затвора, typ: 190 nC
   Тип корпуса: TO247

 Аналог (замена) для IXSH40N60

 

 

IXSH40N60 Datasheet (PDF)

 ..1. Size:277K  ixys
 ixsh40n60 ixsh40n60a ixsm40n60 ixsm40n60a.pdf

IXSH40N60 IXSH40N60

 0.1. Size:54K  ixys
 ixsh40n60b.pdf

IXSH40N60 IXSH40N60

IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC

 0.2. Size:55K  ixys
 ixsh40n60b ixst40n60b.pdf

IXSH40N60 IXSH40N60

IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC

 9.1. Size:102K  ixys
 ixsh45n100.pdf

IXSH40N60 IXSH40N60

Low VCE(sat) IGBT IXSH 45N100 VCES = 1000 VIXSM 45N100 IC25 = 75 AVCE(sat) = 2.7 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 AIC90 TC = 90C45 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 180 A

 9.2. Size:91K  ixys
 ixsh45n120.pdf

IXSH40N60 IXSH40N60

High Voltage, IXSH 45N120 VCES = 1200 VLow VCE(sat) IGBT IC25 = 75 AVCE(sat) = 3 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C45 AE = Em

 9.3. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf

IXSH40N60 IXSH40N60

IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26

 9.4. Size:53K  ixys
 ixsh45n120b.pdf

IXSH40N60 IXSH40N60

IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26

Другие IGBT... IXSH30N60B , IXSH30N60BD1 , IXSH30N60C , IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IXSH35N120A , IXSH35N140A , IKW50N60T , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 .

 

 
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