IXSK50N60BD1 - аналоги, параметры транзистора

IXSK50N60BD1 даташит

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IGBT with Diode IXSK 50N60BD1 VCES = 600 V IXSX 50N60BD1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V TO-264 AA (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A

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IGBT with Diode IXSK 50N60BU1 VCES = 600 V IXSX 50N60BU1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-264 AA VGES Continuous 20 V (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A

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IGBT with Diode IXSK 50N60AU1 VCES = 600 V IC25 = 75 A Combi Pack VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-264 AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C50 A E = Emit

Другие IGBT... IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , NGTB75N65FL2 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 .