Справочник IGBT. IXSN52N60AU1

 

IXSN52N60AU1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXSN52N60AU1
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3(max) V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 220 nS
   Coesⓘ - Выходная емкость, типовая: 400 pF
   Тип корпуса: SOT227B

 Аналог (замена) для IXSN52N60AU1

 

 

IXSN52N60AU1 Datasheet (PDF)

 ..1. Size:150K  ixys
 ixsn52n60au1.pdf

IXSN52N60AU1 IXSN52N60AU1

IGBT with Diode IXSN 52N60AU1 VCES = 600 VIC25 = 80 ACombi Pack VCE(sat) = 3 V3Short Circuit SOA Capability241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B1VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C80 A3IC90 TC = 90C40 A1 = Emitter , 3 = CollectorIC

 9.1. Size:133K  ixys
 ixsn50n60bd3.pdf

IXSN52N60AU1 IXSN52N60AU1

IXSN 50N60BD2VCES = 600 VHIGH Speed IGBTIXSN 50N60BD3IC25 = 75 Awith HiPerFREDVCEsat) = 2.5 VShort Circuit SOA Capabilitytfi = 150 nsBuck & boost configurationsPreliminary data...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Tr

 9.2. Size:70K  ixys
 ixsn55n120a.pdf

IXSN52N60AU1 IXSN52N60AU1

VCES = 1200 VHigh Voltage IGBT IXSN 55N120AIC25 = 110 AVCE(sat) = 4 V3Short Circuit SOA Capability2Preliminary Data4miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VCES TJ = 25C to 150C 1200 V2VCGR TJ = 25C to 150C; RGE = 1 MW 1200 AVGES Continuous 20 VVGEM Transient 30 V43IC25 TC = 25C 110 AIC90 TC = 90C55 A1 = Emitter 3 = Co

 9.3. Size:133K  ixys
 ixsn50n60bd2.pdf

IXSN52N60AU1 IXSN52N60AU1

IXSN 50N60BD2VCES = 600 VHIGH Speed IGBTIXSN 50N60BD3IC25 = 75 Awith HiPerFREDVCEsat) = 2.5 VShort Circuit SOA Capabilitytfi = 150 nsBuck & boost configurationsPreliminary data...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Tr

 9.4. Size:70K  ixys
 ixsn55n120au1.pdf

IXSN52N60AU1 IXSN52N60AU1

IXSN 55N120AU1VCES = 1200 VHigh VoltageIC25 = 110 AIGBT with DiodeVCE(sat) = 4 VShort Circuit SOA Capability32Preliminary data41miniBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 V1VCGR TJ = 25C to 150C; RGE = 1 MW 1200 A2VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 110 A4IC90 TC = 90C55 A3I

Другие IGBT... IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IKW40T120 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B .

 

 
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