IXSN52N60AU1 - аналоги и описание IGBT

IGBT with Diode IXSN 52N60AU1 VCES = 600 V IC25 = 80 A Combi Pack VCE(sat) = 3 V 3 Short Circuit SOA Capability 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C80 A 3 IC90 TC = 90 C40 A 1 = Emitter , 3 = Collector IC

IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr

VCES = 1200 V High Voltage IGBT IXSN 55N120A IC25 = 110 A VCE(sat) = 4 V 3 Short Circuit SOA Capability 2 Preliminary Data 4 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VCES TJ = 25 C to 150 C 1200 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 110 A IC90 TC = 90 C55 A 1 = Emitter 3 = Co

IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr

IXSN 55N120AU1 VCES = 1200 V High Voltage IC25 = 110 A IGBT with Diode VCE(sat) = 4 V Short Circuit SOA Capability 3 2 Preliminary data 4 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V 1 VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 A 2 VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 110 A 4 IC90 TC = 90 C55 A 3 I