IGC03R60DE - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IGC03R60DE
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 2.5 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
Coesⓘ - Выходная емкость, типовая: 15 pF
Тип корпуса: CHIP
Аналог (замена) для IGC03R60DE
IGC03R60DE Datasheet (PDF)
igc03r60de.pdf
IGC03R60DETRENCHSTOPTM RC-Series for hard switching applicationsIGBT chip with monolithically integrated diode in packages offering space saving advantageFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist
igc03r60d.pdf
IGC03R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param
sigc03t60snc.pdf
SIGC03T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A3000-SIGC03T60SNC 600V 2A 1.78 x 1.78 mm2 sawn on foil A002 ME
sigc03t60se.pdf
SIGC03T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS
sigc03t60e.pdf
SIGC03T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag
Другие IGBT... IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IRG4PH50UD , IGC04R60D , IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2