Справочник IGBT. IGC11T120T8L

 

IGC11T120T8L - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IGC11T120T8L

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.07

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 8

Максимальная температура перехода (Tj): 175

Корпус: CHIP

Аналог (замена) для IGC11T120T8L

 

 

IGC11T120T8L Datasheet (PDF)

1.1. igc11t120t8l.pdf Size:70K _igbt_a

IGC11T120T8L
IGC11T120T8L

IGC11T120T8L IGBT4 Low Power Chip Features: Recommended for:  1200V Trench & Field stop technology  low / medium power modules C  low switching losses  positive temperature coefficient Applications:  easy paralleling  low / medium power drives  Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC11T120T8L 1200V 8A 3

1.2. igc11t120t6l.pdf Size:72K _igbt_a

IGC11T120T8L
IGC11T120T8L

 IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology This chip is used for: C • low switching losses • low / medium power modules • positive temperature coefficient • easy paralleling Applications: G • low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P

 4.1. sigc11t60snc.pdf Size:75K _igbt

IGC11T120T8L
IGC11T120T8L

SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: This chip is used for: • 600V NPT technology • 100µm chip • IGBT Modules • positive temperature coefficient • easy paralleling Applications: G E • drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155- SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2

4.2. sigc11t60nc.pdf Size:70K _igbt

IGC11T120T8L
IGC11T120T8L

SIGC11T60NC IGBT Chip in NPT-technology C FEATURES: This chip is used for: • 600V NPT technology • 100µm chip • IGBT Modules • positive temperature coefficient • easy paralleling Applications: G E • drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4158- SIGC11T60NC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra

Другие IGBT... APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IRG4PC50F , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH .

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Список транзисторов

Обновления

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |