SKM100GAL123D - аналоги, параметры транзистора

SKM100GAL123D даташит

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SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 160 A Tj = 175 C Tc =80 C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GAL12T

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SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 100 GAX 173 D 6) IC Tcase = 25/80 C 110 / 75 A SKM 100 GAY 173 D 6) ICM Tcase = 25/80 C; tp = 1 ms 220 / 150 A VGES 20 V Ptot per IGBT/Diode, Tcase = 25 C 625 / 310 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 04

Другие IGBT... SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , MGD623S , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL .