SKM150GB123D - аналоги и описание IGBT

SEMITRANS M Absolute Maximum Ratings Values Ultra Fast IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 150 GB 125 D IC Tcase = 25/80 C 150 / 100 4) A ICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) A Preliminary Data 5) VGES 20 V Ptot per IGBT, Tcase = 25 C 1040 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 400

SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 231 A Tj = 175 C Tc =80 C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12V Tc =80 C 141 A IFnom

SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 232 A Tj = 175 C Tc =80 C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 189 A Tj = 175 C SKM150GB12T4 Tc =80 C

SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 222 A Tj = 175 C Tc =80 C 169 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 187 A Tj = 175 C SKM150GB12VG Tc =80 C 140 A IFno

SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 223 A Tj = 175 C Tc =80 C 172 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 183 A Tj = 175 C SKM150GB12T4G Tc =80