Справочник IGBT. SKM150GB123D

 

SKM150GB123D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SKM150GB123D
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 830 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 80 nS
   Coesⓘ - Выходная емкость, типовая: 1000 pF
   Qgⓘ - Общий заряд затвора, typ: 1000 nC
   Тип корпуса: MODULE

 Аналог (замена) для SKM150GB123D

 

 

SKM150GB123D Datasheet (PDF)

 ..1. Size:599K  semikron
 skm150gb123d.pdf

SKM150GB123D SKM150GB123D

 4.1. Size:142K  semikron
 skm150gb125d.pdf

SKM150GB123D SKM150GB123D

SEMITRANS MAbsolute Maximum RatingsValuesUltra Fast IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 150 GB 125 DIC Tcase = 25/80 C 150 / 100 4) AICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) APreliminary Data 5)VGES 20 VPtot per IGBT, Tcase = 25 C 1040 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 400

 4.2. Size:491K  semikron
 skm150gb12v.pdf

SKM150GB123D SKM150GB123D

SKM150GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12VTc =80C 141 AIFnom

 4.3. Size:457K  semikron
 skm150gb12t4.pdf

SKM150GB123D SKM150GB123D

SKM150GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12T4Tc =80C

 4.4. Size:435K  semikron
 skm150gb12vg.pdf

SKM150GB123D SKM150GB123D

SKM150GB12VGAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 222 ATj = 175 CTc =80C 169 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 187 ATj = 175 CSKM150GB12VGTc =80C 140 AIFno

 4.5. Size:401K  semikron
 skm150gb12t4g.pdf

SKM150GB123D SKM150GB123D

SKM150GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 223 ATj = 175 CTc =80C 172 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 183 ATj = 175 CSKM150GB12T4GTc =80

 4.6. Size:702K  semikron
 skm150gb124d.pdf

SKM150GB123D SKM150GB123D

Другие IGBT... SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D , FGH30S130P , SKM150GB124D , SKM150GB125D , SKM150GB173D , SKM150GB174D , SKM195GAL062D , SKM195GAL063DN , SKM195GAL124DN , SKM195GAR063DN .

 

 
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