BUK9606-55A - описание и поиск аналогов

 ..1. Size:56K  philips
 buk9606-55a 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device fe

 ..2. Size:66K  philips
 buk9506 buk9606-55a 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo

 ..3. Size:808K  nxp
 buk9606-55a.pdf 

BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 4.1. Size:687K  nxp
 buk9606-55b.pdf 

BUK9606-55B N-channel TrenchMOS FET Rev. 04 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low cond

 6.1. Size:51K  philips
 buk9606-30 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice feat

 6.2. Size:333K  philips
 buk9506-75b buk9606-75b.pdf 

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state r

 6.3. Size:931K  nxp
 buk9606-75b.pdf 

BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 20 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 6.4. Size:819K  nxp
 buk9606-40b.pdf 

BUK9606-40B N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu