BUK9608-55A - описание и поиск аналогов

 ..1. Size:328K  philips
 buk9508-55a buk9508-55a buk9608-55a.pdf 

BUK95/9608-55A TrenchMOS logic level FET Rev. 03 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 1

 ..2. Size:78K  philips
 buk9508 buk9608-55a 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo

 ..3. Size:851K  nxp
 buk9608-55a.pdf 

BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 4.1. Size:55K  philips
 buk9608-55 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9608-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC) 75 A the device feat

 4.2. Size:783K  nxp
 buk9608-55b.pdf 

BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features a

 8.1. Size:358K  philips
 buk9504-40a buk9604-40a buk9e04-40a.pdf 

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr

 8.2. Size:56K  philips
 buk9606-55a 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device fe

 8.3. Size:300K  philips
 buk9507-30b buk9607-30b.pdf 

BUK95/9607-30B TrenchMOS logic level FET Rev. 01 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resi

 8.4. Size:326K  philips
 buk9509 buk9609 75a-02.pdf 

BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS techn

 8.5. Size:51K  philips
 buk9606-30 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice feat

 8.6. Size:55K  philips
 buk9605-30a 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9605-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting. Using trench technology ID Drain current (DC) 75 A the device fe

 8.7. Size:333K  philips
 buk9506-75b buk9606-75b.pdf 

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state r

 8.8. Size:313K  philips
 buk9509-55a buk9509-55a buk9609-55a.pdf 

BUK95/9609-55A TrenchMOS logic level FET Rev. 01 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 complia

 8.9. Size:66K  philips
 buk9506 buk9606-55a 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo

 8.10. Size:751K  nxp
 buk9609-75a.pdf 

BUK9609-75A N-channel TrenchMOS logic level FET Rev. 4 30 August 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

 8.11. Size:776K  nxp
 buk9604-40a.pdf 

BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

 8.12. Size:931K  nxp
 buk9606-75b.pdf 

BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 20 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.13. Size:1618K  nxp
 buk9605-30a.pdf 

BUK9605-30A N-channel TrenchMOS logic level FET Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

 8.14. Size:819K  nxp
 buk9606-40b.pdf 

BUK9606-40B N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 8.15. Size:808K  nxp
 buk9606-55a.pdf 

BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.16. Size:976K  nxp
 buk9609-40b.pdf 

BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.17. Size:687K  nxp
 buk9606-55b.pdf 

BUK9606-55B N-channel TrenchMOS FET Rev. 04 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low cond