BUK9E04-40A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK9E04-40A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: I2PAK
Аналог (замена) для BUK9E04-40A
BUK9E04-40A Datasheet (PDF)
buk9504-40a buk9604-40a buk9e04-40a.pdf

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr
buk9e06-55a.pdf

BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9e08-55b.pdf

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk95 buk96 buk9e06-55b.pdf

BUK95/96/9E06-55BN-channel TrenchMOS logic level FETRev. 03 30 November 2004 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology, featuring very lowon-state resistance.1.2 Features TrenchMOS technology Q101 compli
Другие MOSFET... BUK9875-100A , BUK9880-55A , BUK9907-40ATC , BUK9907-55ATE , BUK9C07-65BIT , BUK9C10-55BIT , BUK9C10-65BIT , BUK9E04-30B , AON7403 , BUK9E06-55A , BUK9E06-55B , BUK9E08-55B , BUK9E3R2-40B , BUK9E4R4-40B , BUK9MFF-65PSS , BUK9MGP-55PTS , BUK9MHH-65PNN .
History: IRF7478PBF-1 | STN4260 | PK5G6EA | FDS6680S | HMS60N10D | ZXM64N035L3
History: IRF7478PBF-1 | STN4260 | PK5G6EA | FDS6680S | HMS60N10D | ZXM64N035L3



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