NX3008NBKS. Аналоги и основные параметры

Наименование производителя: NX3008NBKS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.35 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TSSOP6

Аналог (замена) для NX3008NBKS

- подборⓘ MOSFET транзистора по параметрам

 

NX3008NBKS даташит

 ..1. Size:1618K  nxp
 nx3008nbks.pdf pdf_icon

NX3008NBKS

NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2

 5.1. Size:1602K  nxp
 nx3008nbk.pdf pdf_icon

NX3008NBKS

NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1598K  nxp
 nx3008nbkw.pdf pdf_icon

NX3008NBKS

NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.3. Size:1606K  nxp
 nx3008nbkv.pdf pdf_icon

NX3008NBKS

NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BUK9Y34-100B, BUK9Y40-55B, BUK9Y53-100B, BUK9Y58-75B, NX2301P, NX3008CBKS, NX3008CBKV, NX3008NBK, IRF630, NX3008NBKT, NX3008NBKV, NX3008NBKW, NX3008PBK, NX3008PBKS, NX3008PBKT, NX3008PBKV, NX3008PBKW