PH3120L. Аналоги и основные параметры
Наименование производителя: PH3120L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00265 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PH3120L
- подборⓘ MOSFET транзистора по параметрам
PH3120L даташит
ph3120l.pdf
PH3120L N-channel TrenchMOS logic level FET Rev. 03 30 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and
cph3120.pdf
Ordering number ENN6353 PNP Epitaxial Planar Silicon Transistor CPH3120 Compact Motor Driver Applications Features Package Dimensions Small saturation voltage. unit mm Contains a diode between collector and emitter. 2150A Contains bias resistance between base and emitter. [CPH3120] Large current capacity. 2.9 0.15 Compact package facilitates implementation of h
cph3121.pdf
Ordering number ENN7219A CPH3121 / CPH3221 PNP / NPN Epitaxial Planar Silicon Transistors CPH3121 / CPH3221 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilit
cph3122 cph3222.pdf
Ordering number ENN7220 CPH3122 / CPH3222 PNP / NPN Epitaxial Planar Silicon Transistors CPH3122 / CPH3222 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobe. unit mm 2150A [CPH3122 / CPH3222] Features Adoption of MBIT process. 2.9 0.15 0.4 High current capacitance. Low collector-to-emitter saturat
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Список транзисторов
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