PHB45NQ15T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PHB45NQ15T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 230 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 45.1 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 32 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.042 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PHB45NQ15T
PHB45NQ15T Datasheet (PDF)
phb45nq15t.pdf
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PHB45NQ15TN-channel TrenchMOS standard level FETRev. 02 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
phb45nq15t.pdf
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PHB45NQ15TN-channel TrenchMOS standard level FETRev. 02 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
phb45nq10t php45nq10t phw45nq10t 1.pdf
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Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor
phb45nq10t.pdf
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PHB45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur
php45n03lt phb45n03lt phd45n03lt.pdf
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Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal
php45n03lta phb45n03lta phd45n03lta.pdf
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PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance
phb45n03t 1.pdf
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Philips Semiconductors Product specification TrenchMOS transistor PHB45N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic suitable for VDS Drain-source voltage 30 Vsurface mounting envelope using ID Drain current (DC) 45 Atrench technology. The devic
phb45n03lt.pdf
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Philips Semiconductors Product specification TrenchMOS transistor PHB45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal resistance Surface
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History: PSMN9R5-100BS