ALD1101BPA Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ALD1101BPA
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
Tjⓘ - Максимальная температура канала: 125 °C
Cossⓘ - Выходная емкость: 10 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 75 Ohm
Тип корпуса: DIP
- подбор MOSFET транзистора по параметрам
ALD1101BPA Datasheet (PDF)
ald1101.pdf

ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
ald1103.pdf

ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit
ald110808-series.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour
ald110814 ald110914.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol
Другие MOSFET... 75333P , 75333S , 75339G , 75339P , 75339S , 7N50A , A498 , ALD1101APA , IRF3710 , ALD1101DA , ALD1101MA , APT1001R1AN , APT1001R1AVR , APT1001R1BN , APT1001R1BVFR , APT1001R1HN , APT1001R1HVR .
History: MDI4N60BTH | MTP452L3 | MTB1D7N03ATH8 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | STM8405
History: MDI4N60BTH | MTP452L3 | MTB1D7N03ATH8 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | STM8405



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