PHT6NQ10T - описание и поиск аналогов

 ..1. Size:193K  nxp
 pht6nq10t.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:57K  philips
 pht6n03t 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 A trench techno

 9.2. Size:58K  philips
 pht6n06t 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A Using trench technology

 9.3. Size:43K  philips
 pht6n03lt 3.pdf 

 9.4. Size:54K  philips
 pht6n06lt 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A The device features very low Dr