PMDPB65UP. Аналоги и основные параметры

Наименование производителя: PMDPB65UP

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.52 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm

Тип корпуса: HUSON6

Аналог (замена) для PMDPB65UP

- подборⓘ MOSFET транзистора по параметрам

 

PMDPB65UP даташит

 9.1. Size:879K  nxp
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PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an

 9.2. Size:200K  nxp
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PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technolo

 9.3. Size:894K  nxp
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PMDPB80XP 20 V, dual P-channel Trench MOSFET Rev. 1 30 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for low voltag

 9.4. Size:930K  nxp
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PMDPB42UN 20 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an

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