Справочник MOSFET. PMDPB65UP

 

PMDPB65UP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDPB65UP
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: HUSON6
 

 Аналог (замена) для PMDPB65UP

   - подбор ⓘ MOSFET транзистора по параметрам

 

PMDPB65UP Datasheet (PDF)

 9.1. Size:879K  nxp
pmdpb55xp.pdfpdf_icon

PMDPB65UP

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.2. Size:200K  nxp
pmdpb95xne.pdfpdf_icon

PMDPB65UP

PMDPB95XNE30 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo

 9.3. Size:894K  nxp
pmdpb80xp.pdfpdf_icon

PMDPB65UP

PMDPB80XP20 V, dual P-channel Trench MOSFETRev. 1 30 May 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for low voltag

 9.4. Size:930K  nxp
pmdpb42un.pdfpdf_icon

PMDPB65UP

PMDPB42UN20 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

Другие MOSFET... PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T , PHT6N06T , PHT6NQ10T , PHU97NQ03LT , PMBF170 , AO3407 , PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , PMFPB6532UP .

History: STF32N65M5 | IXTH90P10P | 2SK1206

 

 
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