PSMN005-75B. Аналоги и основные параметры

Наименование производителя: PSMN005-75B

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 230 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm

Тип корпуса: D2PAK

Аналог (замена) для PSMN005-75B

- подборⓘ MOSFET транзистора по параметрам

 

PSMN005-75B даташит

 4.1. Size:271K  philips
 psmn005-75p psmn005 75p 75b.pdf pdf_icon

PSMN005-75B

PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Hi

 4.2. Size:682K  nxp
 psmn005-75p.pdf pdf_icon

PSMN005-75B

PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 6.1. Size:120K  philips
 psmn005-55b p hg.pdf pdf_icon

PSMN005-75B

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

 6.2. Size:148K  philips
 psmn005-25d.pdf pdf_icon

PSMN005-75B

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

ПОКАЗАТЬ ЕЩЁ

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