PSMN011-30YL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN011-30YL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 49 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0107 Ohm
Тип корпуса: LFPAK
- подбор MOSFET транзистора по параметрам
PSMN011-30YL Datasheet (PDF)
psmn011-30ylc.pdf

PSMN011-30YLCN-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
psmn011-80ys.pdf

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-60ml.pdf

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss
psmn011-60ms.pdf

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SFI9644 | HM4409 | IXFH6N90 | 2N4338 | SI1402DH | OSG60R070HT3ZF | VS3622AE
History: SFI9644 | HM4409 | IXFH6N90 | 2N4338 | SI1402DH | OSG60R070HT3ZF | VS3622AE



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