PSMN012-60YS - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN012-60YS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 59 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0111 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN012-60YS
PSMN012-60YS Datasheet (PDF)
psmn012-60ys.pdf

PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn012-60ys.pdf

PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn012-60ms.pdf

PSMN012-60MSN-channel 60 V 12 m standard level MOSFET in LFPAK3319 December 2019 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. This product isdesigned and qualified for use in a wide range of motor, industrial, communications and domesticequipment.2. Features and benefits High efficiency due to low switching and
psmn012-80ps.pdf

PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
Другие MOSFET... PSMN005-75B , PSMN006-20K , PSMN008-75B , PSMN009-100B , PSMN009-100P , PSMN011-30YL , PSMN011-80YS , PSMN012-100YS , AO3401 , PSMN012-80PS , PSMN013-100BS , PSMN013-100ES , PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS .
History: 2SJ378 | IXTM4N100A | SIHFP21N60L | 2SK3557-7-TB-E
History: 2SJ378 | IXTM4N100A | SIHFP21N60L | 2SK3557-7-TB-E



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