PSMN045-80YS. Аналоги и основные параметры

Наименование производителя: PSMN045-80YS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 56 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: LFPAK

Аналог (замена) для PSMN045-80YS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN045-80YS даташит

 ..1. Size:233K  philips
 psmn045-80ys.pdf pdf_icon

PSMN045-80YS

PSMN045-80YS N-channel LFPAK 80 V 45 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 8.1. Size:87K  philips
 psmn040-200w.pdf pdf_icon

PSMN045-80YS

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) 40 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 8.2. Size:347K  nxp
 psmn040-100mse.pdf pdf_icon

PSMN045-80YS

PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci

 8.3. Size:352K  nxp
 psmn041-80yl.pdf pdf_icon

PSMN045-80YS

PSMN041-80YL N-channel 80 V 41 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due

ПОКАЗАТЬ ЕЩЁ

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