PSMN063-150D - описание и поиск аналогов

 ..1. Size:97K  philips
 psmn063-150d 2.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 A g RDS(ON) 63 m s GENERAL DESCRIPTION PINNING SOT428 (Dpak) SiliconMAX products use the latest PIN DESCRIPTION tab

 ..2. Size:733K  nxp
 psmn063-150d.pdf 

PSMN063-150D N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 8.1. Size:223K  philips
 psmn069-100ys.pdf 

PSMN069-100YS N-channel LFPAK 100 V 72.4 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren

 8.2. Size:823K  nxp
 psmn069-100ys.pdf 

PSMN069-100YS N-channel LFPAK 100 V 72.4 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren

 9.1. Size:374K  philips
 psmn023-80ls.pdf 

PSMN023-80LS N-channel QFN3333 80 V 23 m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effici

 9.2. Size:225K  philips
 psmn026-80ys.pdf 

PSMN026-80YS N-channel LFPAK 80 V 27.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.3. Size:225K  philips
 psmn018-80ys.pdf 

PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 9.4. Size:300K  philips
 psmn0r9-25ylc.pdf 

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.5. Size:247K  philips
 psmn028-100ys.pdf 

PSMN028-100YS N-channel LFPAK 100V 27.5 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 9.6. Size:221K  philips
 psmn012-80ps.pdf 

PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 9.7. Size:217K  philips
 psmn050-80ps.pdf 

PSMN050-80PS N-channel 80 V 50 m standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 9.8. Size:101K  philips
 psmn015-100p 100b.pdf 

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-

 9.9. Size:91K  philips
 psmn015-110p.pdf 

PSMN015-110P TrenchMOS Standard level FET Rev. 01 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Low gate charge. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4

 9.10. Size:271K  philips
 psmn009 100p 100b-01.pdf 

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications

 9.11. Size:297K  philips
 psmn035 150 series.pdf 

PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 22 February 2001 Product specification 1. Description SiliconMAX 1 products use the latest TrenchMOS 2 technology to achieve the lowest possible on-state resistance for each package. Product availability PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features Fast swi

 9.12. Size:180K  philips
 psmn030-150p.pdf 

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 9.13. Size:196K  philips
 psmn059-150y.pdf 

PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 17 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 9.14. Size:105K  philips
 psmn004-25b p 4.pdf 

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance RDS(ON) 4 m (VGS = 10 V) g RDS(ON) 5 m (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX pr

 9.15. Size:120K  philips
 psmn005-55b p hg.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

 9.16. Size:148K  philips
 psmn005-25d.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

 9.17. Size:233K  philips
 psmn045-80ys.pdf 

PSMN045-80YS N-channel LFPAK 80 V 45 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 9.18. Size:218K  philips
 psmn014-40ys.pdf 

PSMN014-40YS N-channel LFPAK 40 V, 14 m standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 9.19. Size:108K  philips
 psmn008 75p 75b.pdf 

PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance. 1.3 Applications D

 9.20. Size:100K  philips
 psmn010-55d.pdf 

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatible RDS(ON) 10.5 m (VGS = 10 V) g RDS(ON) 12 m (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK)

 9.21. Size:152K  philips
 psmn035-150 series hg 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

 9.22. Size:149K  philips
 psmn070-200 series hg 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN070-200B; PSMN070-200P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low therma

 9.23. Size:190K  philips
 psmn015-60ps.pdf 

PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 9.24. Size:170K  philips
 psmn013-100ps.pdf 

PSMN013-100PS N-channel 100V 13.9m standard level MOSFET in TO220. Rev. 02 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 9.25. Size:100K  philips
 psmn010-55d 4.pdf 

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatible RDS(ON) 10.5 m (VGS = 10 V) g RDS(ON) 12 m (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK)

 9.26. Size:92K  philips
 psmn020-150w.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 A g RDS(ON) 20 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 9.27. Size:241K  philips
 psmn017-60ys.pdf 

PSMN017-60YS N-channel LFPAK 60 V 15.7 m standard level MOSFET Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.28. Size:106K  philips
 psmn008-75p.pdf 

PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance. 1.3 Applications D

 9.29. Size:92K  philips
 psmn009-100w.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 A g RDS(ON) 9 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 9.30. Size:397K  philips
 psmn017-30ll.pdf 

PSMN017-30LL N-channel QFN3333 30 V 17 m logic level MOSFET Rev. 03 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due

 9.31. Size:232K  philips
 psmn012-100ys.pdf 

PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren

 9.32. Size:211K  philips
 psmn022-30pl.pdf 

PSMN022-30PL N-channel 30 V 22 m logic level MOSFET Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low sw

 9.33. Size:246K  philips
 psmn034-100ps.pdf 

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 9.34. Size:238K  philips
 psmn027-100ps.pdf 

PSMN027-100PS N-channel 100V 26.8 m standard level MOSFET in TO220 Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 9.35. Size:234K  philips
 psmn020-100ys.pdf 

PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK Rev. 02 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren

 9.36. Size:221K  philips
 psmn013-80ys.pdf 

PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.37. Size:399K  philips
 psmn013-30ll.pdf 

PSMN013-30LL N-channel QFN3333 30 V 13 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due

 9.38. Size:149K  philips
 psmn005-25d hg 5.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

 9.39. Size:219K  philips
 psmn011-80ys.pdf 

PSMN011-80YS N-channel LFPAK 80 V 11 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 9.40. Size:219K  philips
 psmn030-60ys.pdf 

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 9.41. Size:294K  philips
 psmn004-36b.pdf 

PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applicat

 9.42. Size:387K  philips
 psmn035-100ls.pdf 

PSMN035-100LS N-channel QFN3333 100 V 32m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic

 9.43. Size:291K  philips
 psmn003 30p-b.pdf 

PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features Low on-state resistance Fast switching. 3. Applic

 9.44. Size:213K  philips
 psmn013-100es.pdf 

PSMN013-100ES N-channel 100 V 13.9 m standard level MOSFET in I2PAK Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.45. Size:172K  philips
 psmn057-200p.pdf 

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 9.46. Size:232K  philips
 psmn012-60ys.pdf 

PSMN012-60YS N-channel LFPAK 60 V, 11.1 m standard level MOSFET Rev. 01 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 9.47. Size:271K  philips
 psmn005-75p psmn005 75p 75b.pdf 

PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Hi

 9.48. Size:153K  philips
 psmn015-100 series hg 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

 9.49. Size:119K  philips
 psmn005-55b psmn005-55p.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

 9.50. Size:99K  philips
 psmn003-25w 3.pdf 

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN003-25W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance RDS(ON) 3.2 m (VGS = 10 V) g RDS(ON) 3.5 m (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT429 (TO247

 9.51. Size:87K  philips
 psmn040-200w.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) 40 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 9.52. Size:236K  philips
 psmn016-100ps.pdf 

PSMN016-100PS N-channel 100V 16 m standard level MOSFET in TO220 Rev. 01 1 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 9.53. Size:240K  philips
 psmn016-100ys.pdf 

PSMN016-100YS N-channel 100 V 16.3 m standard level MOSFET in LFPAK Rev. 03 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tre

 9.54. Size:96K  philips
 psmn004-55w.pdf 

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V) g RDS(ON) 4.5 m (VGS = 5 V) s RDS(ON) 5

 9.55. Size:236K  philips
 psmn039-100ys.pdf 

PSMN039-100YS N-channel LFPAK 100 V 39.5 m standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 9.56. Size:97K  philips
 psmn025-100d 2.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) 25 m s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab

 9.57. Size:732K  nxp
 psmn026-80ys.pdf 

PSMN026-80YS N-channel LFPAK 80 V 27.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.58. Size:293K  nxp
 psmn012-60ms.pdf 

PSMN012-60MS N-channel 60 V 12 m standard level MOSFET in LFPAK33 19 December 2019 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and

 9.59. Size:825K  nxp
 psmn018-80ys.pdf 

PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 9.60. Size:230K  nxp
 psmn0r7-25yld.pdf 

PSMN0R7-25YLD N-channel 25 V, 0.7 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 15 April 2015 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with

 9.61. Size:365K  nxp
 psmn013-30mlc.pdf 

PSMN013-30MLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben

 9.62. Size:685K  nxp
 psmn009-100b.pdf 

PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 July 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

 9.63. Size:911K  nxp
 psmn0r9-25ylc.pdf 

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.64. Size:338K  nxp
 psmn011-60ml.pdf 

PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction loss

 9.65. Size:179K  nxp
 psmn085-150k.pdf 

PSMN085-150K N-channel TrenchMOS SiliconMAX standard level FET Rev. 3 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 9.66. Size:194K  nxp
 psmn017-30pl.pdf 

PSMN017-30PL N-channel 30 V 17 m logic level MOSFET in TO220 Rev. 2 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

 9.67. Size:812K  nxp
 psmn028-100ys.pdf 

PSMN028-100YS N-channel LFPAK 100V 27.5 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 9.68. Size:723K  nxp
 psmn012-80ps.pdf 

PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

 9.69. Size:357K  nxp
 psmn075-100mse.pdf 

PSMN075-100MSE N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling the next generation of Power- over-Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot

 9.70. Size:263K  nxp
 psmn0r9-30uld.pdf 

PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util

 9.71. Size:342K  nxp
 psmn011-60ms.pdf 

PSMN011-60MS N-channel 60 V 11.3 m standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conductio

 9.72. Size:202K  nxp
 psmn016-100bs.pdf 

PSMN016-100BS N-channel 100V 16 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 9.73. Size:685K  nxp
 psmn015-110p.pdf 

PSMN015-110P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 October 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 9.74. Size:833K  nxp
 psmn030-150p.pdf 

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 9.75. Size:756K  nxp
 psmn013-60yl.pdf 

PSMN013-60YL N-channel 60 V, 13 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and l

 9.76. Size:271K  nxp
 psmn038 100k.pdf 

PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch

 9.77. Size:233K  nxp
 psmn034-100bs.pdf 

PSMN034-100BS N-channel 100 V 34.5 m standard level MOSFET in D2PAK. Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 9.78. Size:707K  nxp
 psmn015-100p.pdf 

PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 9.79. Size:720K  nxp
 psmn015-100yl.pdf 

PSMN015-100YL N-channel 100 V, 15 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.80. Size:717K  nxp
 psmn059-150y.pdf 

PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET 3 October 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and be

 9.81. Size:291K  nxp
 psmn003-30b psmn003-30p.pdf 

PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features Low on-state resistance Fast switching. 3. Applic

 9.82. Size:712K  nxp
 psmn004-60b.pdf 

PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 15 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 9.83. Size:762K  nxp
 psmn025-80yl.pdf 

PSMN025-80YL N-channel 80 V, 25 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon an

 9.84. Size:819K  nxp
 psmn014-40ys.pdf 

PSMN014-40YS N-channel LFPAK 40 V, 14 m standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 9.85. Size:347K  nxp
 psmn040-100mse.pdf 

PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci

 9.86. Size:722K  nxp
 psmn012-100yl.pdf 

PSMN012-100YL N-channel 100 V, 12 m logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.87. Size:713K  nxp
 psmn008-75b.pdf 

PSMN008-75B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 9.88. Size:800K  nxp
 psmn017-80ps.pdf 

PSMN017-80PS N-channel 80 V 17 m standard level MOSFET in TO220 Rev. 3 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic

 9.89. Size:771K  nxp
 psmn009-100p.pdf 

PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 9.90. Size:352K  nxp
 psmn041-80yl.pdf 

PSMN041-80YL N-channel 80 V 41 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due

 9.91. Size:216K  nxp
 psmn027-100xs.pdf 

PSMN027-100XS N-channel 100V 26.8 m standard level MOSFET in TO220F (SOT186A) Rev. 2 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

 9.92. Size:797K  nxp
 psmn015-60ps.pdf 

PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 9.93. Size:205K  nxp
 psmn017-80bs.pdf 

PSMN017-80BS N-channel 80 V 17 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 9.94. Size:731K  nxp
 psmn010-80yl.pdf 

PSMN010-80YL N-channel 80 V, 10 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and

 9.95. Size:274K  nxp
 psmn020-30mlc.pdf 

PSMN020-30MLC N-channel 30 V 18.1 m logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.96. Size:317K  nxp
 psmn011-100ysf.pdf 

PSMN011-100YSF NextPower 100V, 10.9 m N-channel MOSFET in LFPAK56 package 18 March 2019 Product data sheet 1. General description NextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 9.97. Size:188K  nxp
 psmn017-30el.pdf 

PSMN017-30EL N-channel 30 V 17 m logic level MOSFET in I2PAK Rev. 2 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

 9.98. Size:283K  nxp
 psmn013-100yse.pdf 

PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part of NXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot- swap" controllers - robust enough to withstand substantial inrush currents during turn on, whil

 9.99. Size:806K  nxp
 psmn017-60ys.pdf 

PSMN017-60YS N-channel LFPAK 60 V 15.7 m standard level MOSFET Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.100. Size:230K  nxp
 psmn050-80bs.pdf 

PSMN050-80BS N-channel 80 V 46 m standard level MOSFET in D2PAK Rev. 1 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 9.101. Size:223K  nxp
 psmn022-30bl.pdf 

PSMN022-30BL N-channel 30 V 22.6 m logic level MOSFET in D2PAK Rev. 1 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du

 9.102. Size:232K  nxp
 psmn057-200b.pdf 

PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and be

 9.103. Size:205K  nxp
 psmn013-100xs.pdf 

PSMN013-100XS N-channel 100V 13 m standard level MOSFET in TO220F (SOT186A) Rev. 2 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefit

 9.104. Size:866K  nxp
 psmn012-100ys.pdf 

PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren

 9.105. Size:807K  nxp
 psmn022-30pl.pdf 

PSMN022-30PL N-channel 30 V 22 m logic level MOSFET Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low sw

 9.106. Size:805K  nxp
 psmn034-100ps.pdf 

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 9.107. Size:201K  nxp
 psmn015-60bs.pdf 

PSMN015-60BS N-channel 60 V 14.8 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 9.108. Size:800K  nxp
 psmn027-100ps.pdf 

PSMN027-100PS N-channel 100V 26.8 m standard level MOSFET in TO220 Rev. 3 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic

 9.109. Size:231K  nxp
 psmn012-25ylc.pdf 

PSMN012-25YLC N-channel 25 V 12.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 9.110. Size:743K  nxp
 psmn019-100yl.pdf 

PSMN019-100YL N-channel 100 V, 19 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.111. Size:739K  nxp
 psmn020-100ys.pdf 

PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low g

 9.112. Size:794K  nxp
 psmn025-100d.pdf 

PSMN025-100D N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 12 January 2012 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 9.113. Size:290K  nxp
 psmn0r9-30yld.pdf 

PSMN0R9-30YLD N-channel 30 V, 0.87 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 November 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE

 9.114. Size:728K  nxp
 psmn013-80ys.pdf 

PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.115. Size:902K  nxp
 psmn013-30ylc.pdf 

PSMN013-30YLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 9.116. Size:193K  nxp
 psmn017-30bl.pdf 

PSMN017-30BL N-channel 30 V 17 m logic level MOSFET in D2PAK Rev. 2 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

 9.117. Size:259K  nxp
 psmn018-100psf.pdf 

PSMN018-100PSF NextPower 100 V, 18 m N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 9.118. Size:819K  nxp
 psmn011-80ys.pdf 

PSMN011-80YS N-channel LFPAK 80 V 11 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO

 9.119. Size:820K  nxp
 psmn030-60ys.pdf 

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 9.120. Size:226K  nxp
 psmn011-30ylc.pdf 

PSMN011-30YLC N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 9.121. Size:817K  nxp
 psmn057-200p.pdf 

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 9.122. Size:205K  nxp
 psmn027-100bs.pdf 

PSMN027-100BS N-channel 100V 26.8 m standard level MOSFET in D2PAK. Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 9.123. Size:852K  nxp
 psmn012-60ys.pdf 

PSMN012-60YS N-channel LFPAK 60 V, 11.1 m standard level MOSFET Rev. 01 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 9.124. Size:216K  nxp
 psmn023-40ylc.pdf 

PSMN023-40YLC N-channel 40 V 23m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High rel

 9.125. Size:233K  nxp
 psmn010-25ylc.pdf 

PSMN010-25YLC N-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 9.126. Size:759K  nxp
 psmn021-100yl.pdf 

PSMN021-100YL N-channel 100 V, 21 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.127. Size:798K  nxp
 psmn016-100ps.pdf 

PSMN016-100PS N-channel 100V 16 m standard level MOSFET in TO-220 Rev. 3 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff

 9.128. Size:185K  nxp
 psmn005-30k.pdf 

PSMN005-30K N-channel TrenchMOS SiliconMAX logic level FET Rev. 2 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati

 9.129. Size:682K  nxp
 psmn005-75p.pdf 

PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 9.130. Size:250K  nxp
 psmn018-100esf.pdf 

PSMN018-100ESF NextPower 100 V, 18 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 9.131. Size:896K  nxp
 psmn016-100ys.pdf 

PSMN016-100YS N-channel 100 V 16.3 m standard level MOSFET in LFPAK Rev. 4 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanc

 9.132. Size:204K  nxp
 psmn012-80bs.pdf 

PSMN012-80BS N-channel 80 V 11 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 9.133. Size:758K  nxp
 psmn014-80yl.pdf 

PSMN014-80YL N-channel 80 V, 14 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and

 9.134. Size:801K  nxp
 psmn039-100ys.pdf 

PSMN039-100YS N-channel LFPAK 100 V 39.5 m standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 9.135. Size:320K  nxp
 psmn038-100yl.pdf 

PSMN038-100YL N-channel 100 V 37.5 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency

 9.136. Size:731K  nxp
 psmn013-100bs.pdf 

PSMN013-100BS N-channel 100V 13.9m standard level MOSFET in D2PAK 21 February 2014 Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduc

 9.137. Size:726K  nxp
 psmn0r9-25yld.pdf 

PSMN0R9-25YLD N-channel 25 V, 0.85 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w

 9.138. Size:895K  cn vbsemi
 psmn035-150.pdf 

PSMN035-150 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

 9.139. Size:881K  cn vbsemi
 psmn022-30pl.pdf 

PSMN022-30PL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.010 at VGS = 10 V 55 30 25 nC 0.018 at VGS = 4.5 V 45 D TO-220AB G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise n

 9.140. Size:289K  inchange semiconductor
 psmn034-100ps.pdf 

isc N-Channel MOSFET Transistor PSMN034-100PS FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and