PSMN102-200Y - описание и поиск аналогов

 ..1. Size:332K  philips
 psmn102-200y.pdf 

PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 ..2. Size:332K  nxp
 psmn102-200y.pdf 

PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 9.1. Size:213K  philips
 psmn1r3-30yl.pdf 

PSMN1R3-30YL N-channel 30 V 1.3 m logic level MOSFET in LFPAK Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

 9.2. Size:400K  philips
 psmn1r5-30yl.pdf 

PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.3. Size:235K  philips
 psmn1r5-40ps.pdf 

PSMN1R5-40PS N-channel 40 V 1.6 m standard level MOSFET in TO220. Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High e

 9.4. Size:341K  philips
 psmn1r2-25ylc.pdf 

PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.5. Size:225K  philips
 psmn1r6-30pl.pdf 

PSMN1R6-30PL N-channel 30 V 1.7 m logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

 9.6. Size:299K  philips
 psmn1r7-30yl.pdf 

PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

 9.7. Size:246K  philips
 psmn1r1-30pl.pdf 

PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 9.8. Size:218K  philips
 psmn1r8-30pl.pdf 

PSMN1R8-30PL N-channel 30 V, 1.8 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 9.9. Size:253K  philips
 psmn1r0-30ylc.pdf 

PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK Rev. 03 17 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Powe

 9.10. Size:340K  philips
 psmn1r7-25ylc.pdf 

PSMN1R7-25YLC N-channel 25 V 1.9 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.11. Size:346K  philips
 psmn1r5-30ylc.pdf 

PSMN1R5-30YLC N-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.12. Size:199K  philips
 psmn1r5-25yl.pdf 

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

 9.13. Size:238K  philips
 psmn1r1-30el.pdf 

PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 9.14. Size:353K  philips
 psmn1r9-25ylc.pdf 

PSMN1R9-25YLC N-channel 25 V 2.05 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.15. Size:227K  philips
 psmn1r5-40es.pdf 

PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

 9.16. Size:212K  philips
 psmn1r2-25yl.pdf 

PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

 9.17. Size:384K  philips
 psmn1r1-25ylc.pdf 

PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.18. Size:150K  philips
 psmn130-200d hg 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN130-200D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 A g R

 9.19. Size:342K  philips
 psmn1r2-30ylc.pdf 

PSMN1R2-30YLC N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.20. Size:322K  nxp
 psmn1r0-40ssh.pdf 

PSMN1R0-40SSH N-channel 40 V, 1 m , 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and low

 9.21. Size:978K  nxp
 psmn1r5-30yl.pdf 

PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 9.22. Size:234K  nxp
 psmn1r0-30yld.pdf 

PSMN1R0-30YLD N-channel 30 V, 1.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE

 9.23. Size:285K  nxp
 psmn1r4-30yld.pdf 

PSMN1R4-30YLD N-channel 30 V, 1.4 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit

 9.24. Size:255K  nxp
 psmn1r9-40pl.pdf 

PSMN1R9-40PL N-channel 40 V, 1.7 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

 9.25. Size:743K  nxp
 psmn1r5-40ps.pdf 

PSMN1R5-40PS N-channel 40 V 1.6 m standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching and conduction losses Robus

 9.26. Size:726K  nxp
 psmn1r6-30pl.pdf 

PSMN1R6-30PL N-channel 30 V 1.7 m logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

 9.27. Size:908K  nxp
 psmn1r7-30yl.pdf 

PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

 9.28. Size:288K  nxp
 psmn1r0-40yld.pdf 

PSMN1R0-40YLD N-channel 40 V 1.1 m logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli

 9.29. Size:299K  nxp
 psmn1r8-30mlh.pdf 

PSMN1R8-30MLH N-channel 30 V, 2.1 m , 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-s

 9.30. Size:743K  nxp
 psmn1r1-30pl.pdf 

PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction l

 9.31. Size:814K  nxp
 psmn1r8-30pl.pdf 

PSMN1R8-30PL N-channel 30 V, 1.8 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 9.32. Size:748K  nxp
 psmn1r0-30ylc.pdf 

PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology 15 January 2015 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8

 9.33. Size:264K  nxp
 psmn1r0-40uld.pdf 

PSMN1R0-40ULD N-channel 40 V, 1.1 m , 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced Tre

 9.34. Size:273K  nxp
 psmn165 200k.pdf 

PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability PSMN165-200K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch

 9.35. Size:930K  nxp
 psmn1r5-30ylc.pdf 

PSMN1R5-30YLC N-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.36. Size:706K  nxp
 psmn1r5-25yl.pdf 

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

 9.37. Size:221K  nxp
 psmn1r5-30ble.pdf 

PSMN1R5-30BLE N-channel 30 V 1.5 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe

 9.38. Size:979K  nxp
 psmn1r7-60bs.pdf 

PSMN1R7-60BS N-channel 60 V 2 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic

 9.39. Size:299K  nxp
 psmn1r6-30mlh.pdf 

PSMN1R6-30MLH N-channel 30 V, 1.9 m , 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applicat

 9.40. Size:209K  nxp
 psmn1r8-30bl.pdf 

PSMN1R8-30BL N-channel 30 V, 1.8 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du

 9.41. Size:222K  nxp
 psmn1r1-40bs.pdf 

PSMN1R1-40BS N-channel 40 V 1.3 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits H

 9.42. Size:299K  nxp
 psmn1r5-40ysd.pdf 

PSMN1R5-40YSD N-channel 40 V, 1.5 m , 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

 9.43. Size:729K  nxp
 psmn1r2-25yld.pdf 

PSMN1R2-25YLD N-channel 25 V, 1.2 m , 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi

 9.44. Size:230K  nxp
 psmn1r6-40ylc.pdf 

PSMN1R6-40YLC N-channel 40 V 1.55 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

 9.45. Size:738K  nxp
 psmn1r1-30el.pdf 

PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction los

 9.46. Size:213K  nxp
 psmn1r6-30bl.pdf 

PSMN1R6-30BL N-channel 30 V 1.9 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 9.47. Size:295K  nxp
 psmn1r0-40ysh.pdf 

PSMN1R0-40YSH N-channel 40 V, 1 m , 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

 9.48. Size:730K  nxp
 psmn1r0-25yld.pdf 

PSMN1R0-25YLD N-channel 25 V, 1.0 m , 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi

 9.49. Size:280K  nxp
 psmn1r4-40yld.pdf 

PSMN1R4-40YLD N-channel 40 V 1.4 m logic level MOSFET in LFPAK56 using NextPower-S3 technology 26 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. F

 9.50. Size:816K  nxp
 psmn1r5-40es.pdf 

PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

 9.51. Size:286K  nxp
 psmn1r2-30yld.pdf 

PSMN1R2-30YLD N-channel 30 V, 1.2 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit

 9.52. Size:303K  nxp
 psmn1r9-40ysd.pdf 

PSMN1R9-40YSD N-channel 40 V, 1.9 m , 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

 9.53. Size:719K  nxp
 psmn1r2-25yl.pdf 

PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

 9.54. Size:296K  nxp
 psmn1r5-25mlh.pdf 

PSMN1R5-25MLH N-channel 25 V, 1.81 m , 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast

 9.55. Size:968K  nxp
 psmn1r1-25ylc.pdf 

PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.56. Size:302K  nxp
 psmn1r7-40yld.pdf 

PSMN1R7-40YLD N-channel 40 V, 1.8 m , 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power

 9.57. Size:899K  nxp
 psmn130-200d.pdf 

PSMN130-200D N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 20 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 9.58. Size:233K  nxp
 psmn1r8-40ylc.pdf 

PSMN1R8-40YLC N-channel 40 V 1.8 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High r

 9.59. Size:726K  nxp
 psmn1r7-25yld.pdf 

PSMN1R7-25YLD N-channel 25 V, 1.75 m , 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w

 9.60. Size:926K  nxp
 psmn1r2-30ylc.pdf 

PSMN1R2-30YLC N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 9.61. Size:261K  inchange semiconductor
 psmn1r9-40pl.pdf 

isc N-Channel MOSFET Transistor PSMN1R9-40PL FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.62. Size:261K  inchange semiconductor
 psmn1r5-40ps.pdf 

isc N-Channel MOSFET Transistor PSMN1R5-40PS FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.63. Size:262K  inchange semiconductor
 psmn1r6-30pl.pdf 

isc N-Channel MOSFET Transistor PSMN1R6-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.64. Size:261K  inchange semiconductor
 psmn1r8-30pl.pdf 

isc N-Channel MOSFET Transistor PSMN1R8-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.65. Size:254K  inchange semiconductor
 psmn1r5-30ble.pdf 

isc N-Channel MOSFET Transistor PSMN1R5-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.66. Size:254K  inchange semiconductor
 psmn1r7-60bs.pdf 

isc N-Channel MOSFET Transistor PSMN1R7-60BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.67. Size:255K  inchange semiconductor
 psmn1r8-30bl.pdf 

isc N-Channel MOSFET Transistor PSMN1R8-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.68. Size:255K  inchange semiconductor
 psmn1r6-30bl.pdf 

isc N-Channel MOSFET Transistor PSMN1R6-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.69. Size:255K  inchange semiconductor
 psmn1r5-40es.pdf 

isc N-Channel MOSFET Transistor PSMN1R5-40ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 9.70. Size:261K  inchange semiconductor
 psmn130-200d.pdf 

Isc N-Channel MOSFET Transistor PSMN130-200D FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V