PSMN1R3-30YL. Аналоги и основные параметры
Наименование производителя: PSMN1R3-30YL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 121 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN1R3-30YL
- подборⓘ MOSFET транзистора по параметрам
PSMN1R3-30YL даташит
psmn1r3-30yl.pdf
PSMN1R3-30YL N-channel 30 V 1.3 m logic level MOSFET in LFPAK Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
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psmn1r2-25yl.pdf
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psmn1r2-30ylc.pdf
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psmn1r5-30yl.pdf
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psmn1r1-40bs.pdf
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psmn1r5-40ysd.pdf
PSMN1R5-40YSD N-channel 40 V, 1.5 m , 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn1r2-25yld.pdf
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psmn1r6-40ylc.pdf
PSMN1R6-40YLC N-channel 40 V 1.55 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
psmn1r1-30el.pdf
PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction los
psmn1r6-30bl.pdf
PSMN1R6-30BL N-channel 30 V 1.9 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
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psmn1r0-25yld.pdf
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psmn1r4-40yld.pdf
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psmn1r5-40es.pdf
PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
psmn1r2-30yld.pdf
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psmn1r9-40ysd.pdf
PSMN1R9-40YSD N-channel 40 V, 1.9 m , 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn1r2-25yl.pdf
PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
psmn1r5-25mlh.pdf
PSMN1R5-25MLH N-channel 25 V, 1.81 m , 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast
psmn1r1-25ylc.pdf
PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r7-40yld.pdf
PSMN1R7-40YLD N-channel 40 V, 1.8 m , 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power
psmn1r8-40ylc.pdf
PSMN1R8-40YLC N-channel 40 V 1.8 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High r
psmn1r7-25yld.pdf
PSMN1R7-25YLD N-channel 25 V, 1.75 m , 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w
psmn1r2-30ylc.pdf
PSMN1R2-30YLC N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r9-40pl.pdf
isc N-Channel MOSFET Transistor PSMN1R9-40PL FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r5-40ps.pdf
isc N-Channel MOSFET Transistor PSMN1R5-40PS FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r6-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R6-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r8-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r5-30ble.pdf
isc N-Channel MOSFET Transistor PSMN1R5-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r7-60bs.pdf
isc N-Channel MOSFET Transistor PSMN1R7-60BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r8-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r6-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R6-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r5-40es.pdf
isc N-Channel MOSFET Transistor PSMN1R5-40ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
Другие IGBT... PSMN165-200K, PSMN1R0-30YLC, PSMN1R1-25YLC, PSMN1R1-30EL, PSMN1R1-30PL, PSMN1R2-25YL, PSMN1R2-25YLC, PSMN1R2-30YLC, IRF4905, PSMN1R5-25YL, PSMN1R5-30YL, PSMN1R5-30YLC, PSMN1R5-40ES, PSMN1R5-40PS, PSMN1R6-30PL, PSMN1R7-25YLC, PSMN1R7-30YL
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