PSMN1R5-40PS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R5-40PS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 338 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.6 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 136 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.0016 Ohm
Тип корпуса: TO220AB
Аналог (замена) для PSMN1R5-40PS
PSMN1R5-40PS Datasheet (PDF)
psmn1r5-40ps.pdf
PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO220.Rev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High e
psmn1r5-40ps.pdf
PSMN1R5-40PSN-channel 40 V 1.6 m standard level MOSFET in TO22015 July 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.Product design and manufacture has been optimized for use in battery operated powertools.2. Features and benefits High efficiency due to low switching and conduction losses Robus
psmn1r5-40ps.pdf
isc N-Channel MOSFET Transistor PSMN1R5-40PSFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn1r5-40es.pdf
PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High
psmn1r5-40ysd.pdf
PSMN1R5-40YSDN-channel 40 V, 1.5 m, 240 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance
psmn1r5-40es.pdf
PSMN1R5-40ESN-channel 40 V 1.6 m standard level MOSFET in I2PAK.Rev. 01 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High
psmn1r5-40es.pdf
isc N-Channel MOSFET Transistor PSMN1R5-40ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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