Справочник MOSFET. PSMN2R0-30YL

 

PSMN2R0-30YL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R0-30YL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 97 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.15 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 64 nC
   Сопротивление сток-исток открытого транзистора (Rds): 0.002 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для PSMN2R0-30YL

 

 

PSMN2R0-30YL Datasheet (PDF)

 ..1. Size:238K  philips
psmn2r0-30yl.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 ..2. Size:823K  nxp
psmn2r0-30yl.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 0.1. Size:221K  nxp
psmn2r0-30yle.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30YLEN-channel 30 V 2 m logic level MOSFET in LFPAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe op

 0.2. Size:230K  nxp
psmn2r0-30yld.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30YLDN-channel 30 V, 2.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 December 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 4.1. Size:212K  philips
psmn2r0-30pl.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30PLN-channel 30 V 2.1 m logic level MOSFETRev. 01 24 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

 4.2. Size:713K  nxp
psmn2r0-30pl.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30PLN-channel 30 V 2.1 m logic level MOSFETRev. 01 24 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

 4.3. Size:208K  nxp
psmn2r0-30bl.pdf

PSMN2R0-30YL PSMN2R0-30YL

PSMN2R0-30BLN-channel 30 V 2.1 m logic level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 4.4. Size:261K  inchange semiconductor
psmn2r0-30pl.pdf

PSMN2R0-30YL PSMN2R0-30YL

isc N-Channel MOSFET Transistor PSMN2R0-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.5. Size:254K  inchange semiconductor
psmn2r0-30bl.pdf

PSMN2R0-30YL PSMN2R0-30YL

isc N-Channel MOSFET Transistor PSMN2R0-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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