Справочник MOSFET. PSMN2R2-30YLC

 

PSMN2R2-30YLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R2-30YLC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 141 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.95 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00215 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для PSMN2R2-30YLC

 

 

PSMN2R2-30YLC Datasheet (PDF)

 ..1. Size:345K  philips
psmn2r2-30ylc.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-30YLCN-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technologyRev. 02 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 ..2. Size:929K  nxp
psmn2r2-30ylc.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-30YLCN-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technologyRev. 02 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.1. Size:341K  philips
psmn2r2-25ylc.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-25YLCN-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.2. Size:205K  philips
psmn2r2-40ps.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFETRev. 02 28 September 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 6.3. Size:304K  nxp
psmn2r2-40ysd.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-40YSDN-channel 40 V, 2.2 m, 180 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology25 September 2019 Product data sheet1. General description180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performan

 6.4. Size:214K  nxp
psmn2r2-40bs.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-40BSN-channel 40 V 2.2 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 6.5. Size:925K  nxp
psmn2r2-25ylc.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-25YLCN-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.6. Size:744K  nxp
psmn2r2-40ps.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFET22 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction lo

 6.7. Size:254K  inchange semiconductor
psmn2r2-40bs.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

isc N-Channel MOSFET Transistor PSMN2R2-40BSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.8. Size:260K  inchange semiconductor
psmn2r2-40ps.pdf

PSMN2R2-30YLC
PSMN2R2-30YLC

isc N-Channel MOSFET Transistor PSMN2R2-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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