PSMN2R2-30YLC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN2R2-30YLC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 141 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00215 Ohm
Тип корпуса: LFPAK
- подбор MOSFET транзистора по параметрам
PSMN2R2-30YLC Datasheet (PDF)
psmn2r2-30ylc.pdf

PSMN2R2-30YLCN-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technologyRev. 02 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r2-30ylc.pdf

PSMN2R2-30YLCN-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technologyRev. 02 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r2-25ylc.pdf

PSMN2R2-25YLCN-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn2r2-40ps.pdf

PSMN2R2-40PSN-channel 40 V 2.1 m standard level MOSFETRev. 02 28 September 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRF7748L1 | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2
History: IRF7748L1 | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2



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