PSMN3R3-40YS - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN3R3-40YS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 117 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN3R3-40YS
PSMN3R3-40YS Datasheet (PDF)
psmn3r3-40ys.pdf

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn3r3-40ys.pdf

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn3r3-40msh.pdf

PSMN3R3-40MSHN-channel 40 V, 3.3 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching
psmn3r3-40mlh.pdf

PSMN3R3-40MLHN-channel 40 V, 3.3 m, logic level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching frequ
Другие MOSFET... PSMN2R7-30PL , PSMN2R8-40PS , PSMN2R9-25YLC , PSMN3R0-30YL , PSMN3R0-60ES , PSMN3R0-60PS , PSMN3R2-25YLC , PSMN3R2-30YLC , 10N65 , PSMN3R4-30PL , PSMN3R5-30LL , PSMN3R5-30YL , PSMN3R5-80ES , PSMN3R5-80PS , PSMN3R7-25YLC , PSMN3R7-30YLC , PSMN3R8-30LL .
History: QM2401V | 2N6765 | BLP042N10G-P | RQ5E035AT | SIA426DJ | QM2401C1 | IPD50R3K0CE
History: QM2401V | 2N6765 | BLP042N10G-P | RQ5E035AT | SIA426DJ | QM2401C1 | IPD50R3K0CE



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