PSMN3R5-80ES. Аналоги и основные параметры
Наименование производителя: PSMN3R5-80ES
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 338 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: I2PAK
Аналог (замена) для PSMN3R5-80ES
- подборⓘ MOSFET транзистора по параметрам
PSMN3R5-80ES даташит
psmn3r5-80es.pdf
PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
psmn3r5-80es.pdf
PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
psmn3r5-80es.pdf
isc N-Channel MOSFET Transistor PSMN3R5-80ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn3r5-80ps.pdf
PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
Другие IGBT... PSMN3R0-60ES, PSMN3R0-60PS, PSMN3R2-25YLC, PSMN3R2-30YLC, PSMN3R3-40YS, PSMN3R4-30PL, PSMN3R5-30LL, PSMN3R5-30YL, 18N50, PSMN3R5-80PS, PSMN3R7-25YLC, PSMN3R7-30YLC, PSMN3R8-30LL, PSMN4R0-25YLC, PSMN4R0-30YL, PSMN4R0-40YS, PSMN4R1-30YLC
History: 2SK3404 | AP9970GK-HF | HGK035N10A
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