PSMN3R8-30LL - описание и поиск аналогов

 ..1. Size:399K  philips
 psmn3r8-30ll.pdf 

PSMN3R8-30LL N-channel QFN3333 30 V 3.7 m logic level MOSFET Rev. 3 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency

 6.1. Size:231K  nxp
 psmn3r8-100bs.pdf 

PSMN3R8-100BS N-channel 100 V 3.9 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High e

 6.2. Size:255K  inchange semiconductor
 psmn3r8-100bs.pdf 

isc N-Channel MOSFET Transistor PSMN3R8-100BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.1. Size:238K  philips
 psmn3r5-30yl.pdf 

PSMN3R5-30YL N-channel 30 V 3.5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 8.2. Size:219K  philips
 psmn3r4-30pl.pdf 

PSMN3R4-30PL N-channel 30 V 3.4 m logic level MOSFET Rev. 01 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low s

 8.3. Size:345K  philips
 psmn3r2-25ylc.pdf 

PSMN3R2-25YLC N-channel 25 V 3.4 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.4. Size:229K  philips
 psmn3r5-80es.pdf 

PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

 8.5. Size:404K  philips
 psmn3r5-30ll.pdf 

PSMN3R5-30LL N-channel QFN3333 30 V 3.6 m logic level MOSFET Rev. 3 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency

 8.6. Size:237K  philips
 psmn3r0-30yl.pdf 

PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 8.7. Size:222K  philips
 psmn3r3-40ys.pdf 

PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 8.8. Size:218K  philips
 psmn3r0-60ps.pdf 

PSMN3R0-60PS N-channel 60 V 3.0 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 8.9. Size:345K  philips
 psmn3r7-30ylc.pdf 

PSMN3R7-30YLC N-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.10. Size:349K  philips
 psmn3r7-25ylc.pdf 

PSMN3R7-25YLC N-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.11. Size:343K  philips
 psmn3r2-30ylc.pdf 

PSMN3R2-30YLC N-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.12. Size:235K  philips
 psmn3r5-80ps.pdf 

PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 8.13. Size:329K  nxp
 psmn3r5-30yl.pdf 

PSMN3R5-30YL N-channel 30 V 3.5 m logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits High efficiency due to low

 8.14. Size:306K  nxp
 psmn3r2-40yld.pdf 

PSMN3R2-40YLD N-channel 40 V, 3.3 m , 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 Product data sheet 1. General description 120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power

 8.15. Size:286K  nxp
 psmn3r0-30yld.pdf 

PSMN3R0-30YLD N-channel 30 V, 3.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET

 8.16. Size:298K  nxp
 psmn3r3-40msh.pdf 

PSMN3R3-40MSH N-channel 40 V, 3.3 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching

 8.17. Size:814K  nxp
 psmn3r4-30pl.pdf 

PSMN3R4-30PL N-channel 30 V 3.4 m logic level MOSFET Rev. 01 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low s

 8.18. Size:286K  nxp
 psmn3r7-100bse.pdf 

PSMN3R7-100BSE N-channel 100 V, 3.95 m , standard level MOSFET in D2PAK 3 September 2018 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE com

 8.19. Size:249K  nxp
 psmn3r9-60ps.pdf 

PSMN3R9-60PS N-channel 60 V, 3.9 m standard level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust const

 8.20. Size:191K  nxp
 psmn3r3-80ps.pdf 

PSMN3R3-80PS N-channel 80 V, 3.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 8.21. Size:730K  nxp
 psmn3r0-60es.pdf 

PSMN3R0-60ES N-channel 60 V 3.0 m standard level MOSFET in I2PAK. 3 June 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduct

 8.22. Size:369K  nxp
 psmn3r0-30mlc.pdf 

PSMN3R0-30MLC N-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment 1.2 Features and bene

 8.23. Size:365K  nxp
 psmn3r9-25mlc.pdf 

PSMN3R9-25MLC N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben

 8.24. Size:222K  nxp
 psmn3r3-80bs.pdf 

PSMN3R3-80BS N-channel 80 V, 3.5 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie

 8.25. Size:818K  nxp
 psmn3r5-80es.pdf 

PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

 8.26. Size:283K  nxp
 psmn3r5-40ysd.pdf 

PSMN3R5-40YSD N-channel 40 V, 3.5 m , 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product data sheet 1. General description 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

 8.27. Size:207K  nxp
 psmn3r0-60bs.pdf 

PSMN3R0-60BS N-channel 60 V 3.2 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 8.28. Size:296K  nxp
 psmn3r3-40mlh.pdf 

PSMN3R3-40MLH N-channel 40 V, 3.3 m , logic level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 118 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequ

 8.29. Size:294K  nxp
 psmn3r9-100ysf.pdf 

PSMN3R9-100YSF NextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56 package 17 February 2020 Preliminary data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended for industrial and consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin

 8.30. Size:255K  nxp
 psmn3r3-60pl.pdf 

PSMN3R3-60PL N-channel 60 V, 3.4 m logic level MOSFET in SOT78 7 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

 8.31. Size:232K  nxp
 psmn3r9-60xs.pdf 

PSMN3R9-60XS N-channel 60 V, 4.0 m standard level MOSFET in TO220F (SOT186A) 12 September 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due

 8.32. Size:728K  nxp
 psmn3r5-25mld.pdf 

PSMN3R5-25MLD N-channel 25 V, 3.72 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF

 8.33. Size:184K  nxp
 psmn3r3-80es.pdf 

PSMN3R3-80ES N-channel 80 V, 3.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 8.34. Size:210K  nxp
 psmn3r4-30bl.pdf 

PSMN3R4-30BL N-channel 30 V 3.3 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 8.35. Size:221K  nxp
 psmn3r4-30ble.pdf 

PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe

 8.36. Size:823K  nxp
 psmn3r0-30yl.pdf 

PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

 8.37. Size:824K  nxp
 psmn3r3-40ys.pdf 

PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 8.38. Size:815K  nxp
 psmn3r0-60ps.pdf 

PSMN3R0-60PS N-channel 60 V 3.0 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 8.39. Size:927K  nxp
 psmn3r2-30ylc.pdf 

PSMN3R2-30YLC N-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 8.40. Size:819K  nxp
 psmn3r5-80ps.pdf 

PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

 8.41. Size:261K  inchange semiconductor
 psmn3r4-30pl.pdf 

isc N-Channel MOSFET Transistor PSMN3R4-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.42. Size:258K  inchange semiconductor
 psmn3r7-100bse.pdf 

Isc N-Channel MOSFET Transistor PSMN3R7-100BSE FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

 8.43. Size:261K  inchange semiconductor
 psmn3r9-60ps.pdf 

isc N-Channel MOSFET Transistor PSMN3R9-60PS FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.44. Size:261K  inchange semiconductor
 psmn3r3-80ps.pdf 

isc N-Channel MOSFET Transistor PSMN3R3-80PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.45. Size:255K  inchange semiconductor
 psmn3r0-60es.pdf 

isc N-Channel MOSFET Transistor PSMN3R0-60ES FEATURES Drain Current I = 83.4A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.46. Size:255K  inchange semiconductor
 psmn3r3-80bs.pdf 

isc N-Channel MOSFET Transistor PSMN3R3-80BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.47. Size:254K  inchange semiconductor
 psmn3r5-80es.pdf 

isc N-Channel MOSFET Transistor PSMN3R5-80ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.48. Size:255K  inchange semiconductor
 psmn3r0-60bs.pdf 

isc N-Channel MOSFET Transistor PSMN3R0-60BS FEATURES Drain Current I = 83.4A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.49. Size:261K  inchange semiconductor
 psmn3r3-60pl.pdf 

isc N-Channel MOSFET Transistor PSMN3R3-60PL FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.50. Size:255K  inchange semiconductor
 psmn3r3-80es.pdf 

isc N-Channel MOSFET Transistor PSMN3R3-80ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.51. Size:254K  inchange semiconductor
 psmn3r4-30bl.pdf 

isc N-Channel MOSFET Transistor PSMN3R4-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.52. Size:255K  inchange semiconductor
 psmn3r4-30ble.pdf 

isc N-Channel MOSFET Transistor PSMN3R4-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.53. Size:261K  inchange semiconductor
 psmn3r0-60ps.pdf 

isc N-Channel MOSFET Transistor PSMN3R0-60PS FEATURES Drain Current I = 83.4A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.54. Size:261K  inchange semiconductor
 psmn3r5-80ps.pdf 

isc N-Channel MOSFET Transistor PSMN3R5-80PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general